a p28g40gem-hf advanced power n-channel insulated gate electronics corp. bipolar transistor high input impedance v ce high peak current capability i cp low gate drive strobe flash applications rohs compliant & halogen-free absolute maximum ratings electrical characteristics@t j =25 o c(unless otherwise specified) symbol min. typ. max. units i ges --+ 30 ua i ces - - 25 ua v ce(sat) - 3.6 9 v v ge(th) 0.3 - 1.2 v q g - 86 138 nc q ge -2- nc q gc -23- nc t d(on) - 220 - ns t r - 800 - ns t d(off) - 1.6 - s t f - 1.5 - s c ies - 5100 8160 pf c oes -38- pf c res -27- pf rth ja 1 - - 125 o c/w notes: 1.surface mounted on min. copper pad of fr4 board. data and specifications subject to change without notice 201212131 v ce =200v v ge =4v v ce =30v r g =10 i c =160a v ge =0v thermal resistance junction-ambient v ge =4v fall time 1 o c v cc =320v operating junction temperature range 150 test conditions reverse transfer capacitance v ge =3v, i cp =150a (pulsed) v ce =v ge , i c =250ua gate-emitter leakage current v maximum power dissipation v gep i cp p d @t a =25 1 peak gate-emitter voltage + 6 150 1 pulsed collector current, v ge @ 3v a -55 to 150 o c w symbol v ce 400v 150a rating collector-emitter voltage units parameter v 400 halogen-free product input capacitance output capacitance f=1.0mhz rise time gate-collector charge turn-on delay time turn-off delay time i c =40a gate-emitter charge t stg v ge =+ 6v, v ce =0v v ce =400v, v ge =0v t j storage temperature range collector-emitter saturation voltage gate threshold voltage total gate charge parameter collector-emitter leakage current g c e e e e g c c c c so-8
AP28G40GEM-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. transfer characteristics fig 4. collector- emitter saturation voltage v.s. junction temperature fig 5. collector current v.s. fig 6. collector current v.s. gate-emitter voltage gate-emitter voltage 2 1 2 3 4 5 6 0 20 40 60 80 100 120 140 160 junction temperature ( o c) v ce(sat) ,saturation voltage(v) v ge =3v i c =150a i c =90a i c =75a i c =60a 0 40 80 120 160 02468 v ce , collector-emitter voltage (v) i c , collector current (a) t a = 150 o c 5.0v 4.0v 3.0v 2.5v v g = 2.0v 0 40 80 120 160 02468 v ce , collector-emitter voltage (v) i c , collector current (a) t a =25 o c 5.0v 4.0v 3.0v 2.5v v g =2.0v 2 3 4 5 6 0123456 v ge , gate-emitter voltage(v) v ce ,collector-emitter voltage(v) i c = 150a i c =90a i c =75a t a =25 o c 0 20 40 60 80 100 120 0123456 v ge , gate-emitter voltage (v) i c , collector current(a) v ce =3v t a =150 o c 0 2 4 6 8 0123456 v ge , gate-emitter voltage(v) v ce ,collector-emitter voltage(v) t a =150 o c i c =150a i c =90a i c =75a t a =25 o c
a p28g40gem-hf fi g 7. t yp ical ca p acitance characterisitics fig 8. maximum pulse collector current fig 9. switching time test circuit fig 10. switching time waveform fig 11. gate charge test circuit fig 12. gate charge waveform 3 t d(on) t r t d(off) t f v ce v ge 10% 90% to the oscilloscope - + 4v c g e v ce v ge r g r c v cc =320 v 0 1000 2000 3000 4000 5000 6000 1 5 9 13 17 21 25 29 33 37 v ce , collector-emitter voltage (v)) c (pf) f =1.0mhz c ies c oes c res 0 1 2 3 4 5 6 0 40 80 120 160 q g , gate charge (nc) v ge , gate -emitter voltage (v) i cp =40a v ce =200v 0 40 80 120 160 02468 v ge , gate-to-emitter voltage (v) i cp , peak collector current (a) t a =70 o c v cc =200v to the oscilloscope - + c g v ce v ge i c i g 1~3ma e
|
